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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 25, Number 8 (2013)
Copyright(C) MYU K.K.
pp. 567-576
S&M949 Research Paper
https://doi.org/10.18494/SAM.2013.890
Published: October 28, 2013

pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide [PDF]

Kristine Bedner, Vitaliy Anatolijovic Guzenko, Alexey Tarasov, Mathias Wipf, Ralph Lukas Stoop, David Just, Sara Rigante, Wangyang Fu, Renato Amaral Minamisawa, Christian David, Michel Calame, Jens Gobrecht and Christian Schonenberger

(Received January 9, 2013; Accepted May 9, 2013)

Keywords: pH response, nanowire sensor, gate oxide, ion-sensitive field-effect transistor

We present a systematic study of the performance of silicon nanowires (SiNWs) with different widths when they are used as ion-sensitive field-effect transistors (ISFETs) in pH-sensing experiments. The SiNW widths ranged from 100 nm to 1 µm. The SiNWISFETs were successfully fabricated from silicon-on-insulator (SOI) wafers with Al2O3 or HfO2 as gate dielectric. All the SiNWs showed a pH Response close to the Nernstian limit of 59.5 mV/pH at 300 K, independent of their width, or the investigated gate dielectric or operating mode. Even nanowires (NWs) in the 100 nm range operated reliably without degradation of their functionality. This result is of importance for a broad research field using SiNW sensors as a candidate for future applications.

Corresponding author: Kristine Bedner


Cite this article
Kristine Bedner, Vitaliy Anatolijovic Guzenko, Alexey Tarasov, Mathias Wipf, Ralph Lukas Stoop, David Just, Sara Rigante, Wangyang Fu, Renato Amaral Minamisawa, Christian David, Michel Calame, Jens Gobrecht and Christian Schonenberger, pH Response of Silicon Nanowire Sensors: Impact of Nanowire Width and Gate Oxide, Sens. Mater., Vol. 25, No. 8, 2013, p. 567-576.



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