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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
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Sensors and Materials
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Sensors and Materials, Volume 32, Number 11(2) (2020)
Copyright(C) MYU K.K.
pp. 3727-3736
S&M2371 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2020.3138
Published: November 18, 2020

Effect of Annealing Temperature on Optoelectronic Performance of F- and Al-codoped ZnO Thin Films for Photosensor Applications [PDF]

Chi-Fan Liu, Tao-Hsing Chen, and Jia-Ting Huang

(Received June 28, 2020; Accepted October 20, 2020)

Keywords: FAZO thin film, optical property, electrical property, annealing temperature

Fluorine- and aluminum-codoped ZnO (FAZO) thin films are sputtered on Corning glass substrates using an RF magnetron sputtering system. The structural, electrical, and optical properties of the deposited thin films are investigated under the as-sputtered condition and after annealing at temperatures of 200–400 °C. X-ray diffraction (XRD) analysis results show that a higher annealing temperature is beneficial in improving the crystallinity of the FAZO films. An annealing temperature of 400 °C results in the lowest electrical resistivity (4.1 × 10−4 Ω·cm) and highest average transmittance (78.43%) among the deposited films. Moreover, an annealing temperature of 400 °C increases the energy bandgap from 3.06 eV under the as-sputtered condition to 3.21 eV after annealing and promotes a strong grain growth effect. As a result, the annealed FAZO film is an ideal material for solar cells and photosensor applications.

Corresponding author: Tao-Hsing Chen


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Cite this article
Chi-Fan Liu, Tao-Hsing Chen, and Jia-Ting Huang, Effect of Annealing Temperature on Optoelectronic Performance of F- and Al-codoped ZnO Thin Films for Photosensor Applications, Sens. Mater., Vol. 32, No. 11, 2020, p. 3727-3736.



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