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Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

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Online: ISSN 2435-0869
Sensors and Materials
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Sensors and Materials, Volume 32, Number 4(2) (2020)
Copyright(C) MYU K.K.
pp. 1445-1451
S&M2192 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2020.2754
Published: April 20, 2020

Transient Absorption Spectroscopy of TlBr Crystals Using Pulsed Electron Beams [PDF]

Masanori Koshimizu, Yusa Muroya, Shinichi Yamashita, Mitsuhiro Nogami, Keitaro Hitomi, Yutaka Fujimoto, and Keisuke Asai

(Received December 20, 2019; Accepted February 27, 2020)

Keywords: transient absorption, pulse radiolysis, TlBr, carrier transport, semiconductor detector

We analyzed the transient absorption properties of TlBr crystals using pulsed electron beams as excitation sources. We observed the transient absorption spectra and temporal profiles in the pico- and nanosecond scales and compared the results obtained for TIBr crystals that are empirically appropriate with those that are inappropriate for semiconductor detectors. The results showed negligible difference between the properties of the two types of crystal, which indicates that their trap center concentrations were similar. A transient absorption band was observed at approximately 1160 nm in the nanosecond scale, while its short-wavelength tail was observed in the picosecond scale. The absorption band is attributed to the localized holes at Tl+ that are stabilized by some defects. In contrast, no absorption band attributable to localized electron centers was observed, indicating that while hole transport is hindered by defects, electron transport is not.

Corresponding author: Masanori Koshimizu


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Cite this article
Masanori Koshimizu, Yusa Muroya, Shinichi Yamashita, Mitsuhiro Nogami, Keitaro Hitomi, Yutaka Fujimoto, and Keisuke Asai, Transient Absorption Spectroscopy of TlBr Crystals Using Pulsed Electron Beams, Sens. Mater., Vol. 32, No. 4, 2020, p. 1445-1451.



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