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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
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Sensors and Materials, Volume 32, Number 4(2) (2020)
Copyright(C) MYU K.K.
pp. 1435-1443
S&M2191 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2020.2744
Published: April 20, 2020

Crystalline Characterization of TlBr Semiconductor Detectors Using Wavelength-resolved Neutron Imaging [PDF]

Kenichi Watanabe, Kio Matsumoto, Akira Unitani, Keitaro Hitomi, Mitsuhiro Nogami, and Winfried Kockelmann

(Received December 19, 2019; Accepted March 10, 2020)

Keywords: TlBr semiconductor detector, neutron diffraction, energy-resolved neutron imaging

TlBr has been one of the promising gamma-ray detector materials because of its high gamma-ray attenuation length, availability of room-temperature operation, and relatively high energy resolution. However, the high-resolution detector has been limited to a relatively small size. Hence, the next task in the TlBr development is to establish fabrication processes of large detectors. As one of the candidates to evaluate the TlBr crystal quality, we demonstrated neutron Bragg-dip imaging, which is one of the neutron diffraction techniques and based on wavelength-resolved neutron imaging. All the studied samples seemed to be imperfect crystals and slightly distorted. Although differences in crystal orientation distributions among the samples cannot be obtained from the present data, it is suggested that one of the crystals has a boundary, or possibly a small crystal grain near the crystal center, which may result in a poor product.

Corresponding author: Kenichi Watanabe


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Cite this article
Kenichi Watanabe, Kio Matsumoto, Akira Unitani, Keitaro Hitomi, Mitsuhiro Nogami, and Winfried Kockelmann, Crystalline Characterization of TlBr Semiconductor Detectors Using Wavelength-resolved Neutron Imaging, Sens. Mater., Vol. 32, No. 4, 2020, p. 1435-1443.



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