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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 31, Number 7(2) (2019)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 2291-2301
S&M1932 Research Paper of Special Issue https://doi.org/10.18494/SAM.2019.2317 Published in advance: April 9, 2019 Published: July 19, 2019 Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications [PDF] Kwan-Soo Kim, Hirokazu Fukidome, and Maki Suemitsu (Received January 31, 2019; Accepted February 25, 2019) Keywords: epitaxial graphene, solution process, sensor, microwave annealing
We propose a method for fabricating high-performance epitaxial graphene field-effect transistors (EG-FETs), involving a microwave-annealing-treated solution-based Al2O3 (MWA-treated sol-Al2O3) layer as a gate dielectric. The MWA process substantially preserves the pristine properties of EG with minimal hole doping and strain induction. The MWA-treated sol-Al2O3 showed a surface roughness of ~0.33 nm, a dielectric constant of 7.5, and a leakage current of 8.7 × 10−6 A/cm2. The transconductance of the MWA-based EG-FET presents an enhanced field effect mobility by a factor of about 8 compared with the EG-FET with a natural oxide of Al.
Corresponding author: Kwan-Soo Kim  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Kwan-Soo Kim, Hirokazu Fukidome, and Maki Suemitsu, Direct Formation of Solution-based Al2O3 on Epitaxial Graphene Surface for Sensor Applications, Sens. Mater., Vol. 31, No. 7, 2019, p. 2291-2301. |
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