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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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English 日本語
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MYU K.K.
Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 31, Number 2(2) (2019)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 501-507
S&M1790 Research Paper of Special Issue https://doi.org/10.18494/SAM.2019.2160 Published: February 18, 2019 Structural and Electrical Characteristics of Solution-processed Copper Oxide Films for Application in Thin-film Transistors [PDF] Heonju Lee, Xue Zhang, Eui-Jik Kim, and Jaehoon Park (Received October 15, 2018; Accepted December 3, 2018) Keywords: sol-gel process, oxide semiconductor, copper oxide, thermal annealing, thin-film transistor
In this study, we investigated the effect of the annealing time of copper oxide (CuO) on the morphological and chemical characteristics of films and the electrical properties of bottom-gate/top-contact CuO thin-film transistors (TFTs). Thermogravimetric analysis showed that thermal annealing at 600 ℃ for 30 min and 3 h resulted in the formation of CuO films. The CuO films were analyzed by X-ray diffraction, X-ray photoemission spectroscopy, absorbance determination, and Raman spectroscopy. As the annealing time of the CuO film was increased, the composition of the films changed from Cu(OH)2 to CuO. Considering the overall TFT performance, the optimal annealing time in solution-processed CuO semiconductors was determined to be 3 h. These results suggest that the annealing time is crucial in modulating the chemical characteristics of solution-processed CuO thin films and the TFT performance.
Corresponding author: Jaehoon Park  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Heonju Lee, Xue Zhang, Eui-Jik Kim, and Jaehoon Park, Structural and Electrical Characteristics of Solution-processed Copper Oxide Films for Application in Thin-film Transistors, Sens. Mater., Vol. 31, No. 2, 2019, p. 501-507. |
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