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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 29, Number 4 (2017)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 363-370
S&M1328 Research Paper of Special Issue https://doi.org/10.18494/SAM.2017.1517 Published: April 19, 2017 High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate [PDF] Kuan-Ting Liu, Shoou-Jinn Chang, and Sean Wu (Received August 30, 2016; Accepted January 24, 2017) Keywords: GaN ultraviolet photodetector, metal-semiconductor-metal, periodic trapezoid column-shaped patterned sapphire substrate, responsivity, UV-to-visible rejection ratio
A GaN ultraviolet (UV) photodetector with a metal-semiconductor-metal structure is grown on a periodic trapezoid-column patterned sapphire substrate by metalorganic chemical vapor deposition. Under 5 V reverse bias, the photodetector fabricated on such a patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, a much larger UV-to-visible rejection ratio, and a 476% enhancement in the maximum responsivity than those of the photodetector fabricated on a conventional flat sapphire substrate. These phenomena may all be attributed to the reduction in threading dislocation density and the greater number of photogenerated carriers caused by the improved quality of the GaN film, as well as the reflection and/or scattering of unabsorbed photons on the interface between the GaN film and the periodic trapezoid-column pattern of the substrate.
Corresponding author: Kuan-Ting Liu Cite this article Kuan-Ting Liu, Shoou-Jinn Chang, and Sean Wu, High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate, Sens. Mater., Vol. 29, No. 4, 2017, p. 363-370. |
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