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Vol. 34, No. 8(3), S&M3042

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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 17, Number 6 (2005)
Copyright(C) MYU K.K.
pp. 343-353
S&M612 Research Paper of Special Issue
Published: 2005

Introduction of InP-Based Light Emitter into GaAs-Based 3D Photonic Crystal by Improved Wafer Bonding of Dissimilar Materials [PDF]

Masahiro Imada, Shinpei Ogawa, Susumu Yoshimoto and Susumu Noda

(Received January 10, 2005; Accepted January 10, 2005)

Keywords: optical material, photonic crystal, thermal stress, wafer bonding

We developed improved wafer-bonding techniques for dissimilar materials in order to introduce an InP-based light emitter into a GaAs-based three-dimensional (3D) photonic crystal (PC). Observation of the GaAs/InGaAsP-bonding interface by scanning acoustic microscopy revealed that debonding occurred at approximately 300℃ due to the differing thermal expansion coefficients of GaAs and InP. We calculated thermal stress using a 2D finite-element method and found that it could be reduced by thinning the InP substrate. These results were used to successfully develop a 3D PC incorporating a multiple quantum- well light-emitting structure and artificial defects. Photoluminescence measurements revealed that spontaneous emission within the PC region was reduced due to the complete photonic band gap, while strong emission due to the defect state was observed only within the defect region. These results are important steps towards the realization of novel lightsources, such as zero-threshold lasers, using 3D PCs.

Corresponding author: Masahiro Imada and Susumu Noda


Cite this article
Masahiro Imada, Shinpei Ogawa, Susumu Yoshimoto and Susumu Noda, Introduction of InP-Based Light Emitter into GaAs-Based 3D Photonic Crystal by Improved Wafer Bonding of Dissimilar Materials, Sens. Mater., Vol. 17, No. 6, 2005, p. 343-353.



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