Notice of retraction
Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 17, Number 4 (2005)
Copyright(C) MYU K.K.
pp. 199-210
S&M598 Research Paper of Special Issue
Published: 2005

Silicon Wet Etch Anisotropy: Analysis of the Impact of {111}-, {110}-, {100}- Terrace Widths [PDF]

Irina Stateikina, Leslie M. Landsberger, Mojtaba Kahrizi, Nazmul Hoque and Victo Rossokhaty

(Received Ocotber 1, 2004; Accepted March 17, 2005)

Keywords: anisotropic etching of silicon, TMAH, step-based model, orientation of crystal facets

A step-based model of wet anisotropic etching of silicon is examined in conjunction with observations from wagon-wheel under-etch experiments of Si{100} and Si{110} in tetra-methyl ammonium hydroxide (TMAH) at 25 wt% at 80C. Stepped surfaces may be composed of flat {111} terraces, and/or flat {100} or {110} terraces. Transitions (cross- overs) between terrace orientations are theoretically analyzed and found to be approxi- mately {331} and {311} planes, respectively. These crossover planes occur at several deviation angles and underetched facets. The theoretical crossovers are compared to experimental observations regarding transitions in facet configuration, roughness, and etch rate. These crossovers may significantly influence the complexity of etch rate variation and facet appearance or disappearance in an underetch experiment.

Corresponding author: Irina Stateikina


Cite this article
Irina Stateikina, Leslie M. Landsberger, Mojtaba Kahrizi, Nazmul Hoque and Victo Rossokhaty, Silicon Wet Etch Anisotropy: Analysis of the Impact of {111}-, {110}-, {100}- Terrace Widths, Sens. Mater., Vol. 17, No. 4, 2005, p. 199-210.



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