Notice of retraction
Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

Instructions to authors
English    日本語

Instructions for manuscript preparation
English    日本語

Template
English

Publisher
 MYU K.K.
 Sensors and Materials
 1-23-3-303 Sendagi,
 Bunkyo-ku, Tokyo 113-0022, Japan
 Tel: 81-3-3827-8549
 Fax: 81-3-3827-8547

MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.


MYU Research

(proofreading and recording)


MYU K.K.
(translation service)


The Art of Writing Scientific Papers

(How to write scientific papers)
(Japanese Only)

Sensors and Materials, Volume 15, Number 7 (2003)
Copyright(C) MYU K.K.
pp. 361-370
S&M534 Research Paper
Published: 2003

Highly Sensitive PMOSFET Photodetector and Its Application to CMOS Active Pixel Sensor [PDF]

Jae-Hyoun Park, Sang-Ho Seo, In-Soo Wang, Hyung-June Yoon, Jang-Kyoo Shin, Pyung Choi, Young-Chang Jo, and Hoon Kim

(Received July 23, 2003; Accepted September 26, 2003)

Keywords: PMOSFET, photodetector, CMOS, active pixel sensor

In this paper, a highly sensitive p-channel metal oxide field effect transistor (PMOSFET) photodetector fabricated using a standard complementary metal oxide semiconductor (CMOS) process is described. The photodetector is configured by the floating gate/n-well tied PMOSFET. The device has similar IDS-VDS characteristics to a general PMOSFET when the incident light power instead of the gate voltage is supplied and has a transient response fast enough that there is no image lag in its application to an imager with television resolution. A 1  16 CMOS active pixel sensor using the PMOSFET photode- tector was also designed and fabricated using 1-poly and 2-metal 1.5 m CMOS technol- ogy. The unit pixel of this sensor consists of a PMOSFET photodetector and four n- channel metal oxide field effect transistors (NMOSFET). Its area is 86 m  90.5 m and fill factor is 12%. Even though the pixel has a relatively small its fill factor, a sufficient photocurrent can be obtained. A highly sensitive pixel is feasible with the use of the photodetector with current amplification and the pixel circuit with voltage gain.

Corresponding author: Jang-Kyoo Shin


Cite this article
Jae-Hyoun Park, Sang-Ho Seo, In-Soo Wang, Hyung-June Yoon, Jang-Kyoo Shin, Pyung Choi, Young-Chang Jo, and Hoon Kim, Highly Sensitive PMOSFET Photodetector and Its Application to CMOS Active Pixel Sensor, Sens. Mater., Vol. 15, No. 7, 2003, p. 361-370.



Forthcoming Regular Issues


Forthcoming Special Issues

Special issue on Novel Materials and Sensing Technologies on Electronic and Mechanical Devices (2)-1
Guest editor, Teen-Hang Meen (National Formosa University), Wenbing Zhao (Cleveland State University), and Hsien-Wei Tseng (Longyan University)


Special Issue on Materials, Devices, Circuits, and Analytical Methods for Various Sensors (4)
Guest editor, Chien-Jung Huang (National University of Kaohsiung), Cheng-Hsing Hsu (National United University), Ja-Hao Chen (Feng Chia University), and Wei-Ling Hsu (Huaiyin Normal University)
Conference website


Special issue on Novel Materials and Sensing Technologies on Electronic and Mechanical Devices (2)-2
Guest editor, Teen-Hang Meen (National Formosa University), Wenbing Zhao (Cleveland State University), and Hsien-Wei Tseng (Longyan University)


Special Issue on New Trends in Robots and Their Applications
Guest editor, Ikuo Yamamoto (Nagasaki University)


Special Issue on Artificial Intelligence in Sensing Technologies and Systems
Guest editor, Prof. Lin Lin (Dalian University of Technology)
Call for paper


Special issue on Novel Materials and Sensing Technologies on Electronic and Mechanical Devices (3)
Guest editor, Teen-Hang Meen (National Formosa University), Wenbing Zhao (Cleveland State University), and Hsien-Wei Tseng (Longyan University)


Copyright(C) MYU K.K. All Rights Reserved.